What is HDP Cvd?
What is HDP Cvd?
High Density Plasma Chemical Vapor Deposition (HDPCVD) is a special form of PECVD that employs an Inductively Coupled Plasma (ICP) source to generate a higher plasma density than that of a standard parallel plate PECVD system.
What is HDP semiconductor?
In one embodiment, a semiconductor substrate is placed into a process chamber. During this time, deposition and etching processes are concurrently performed using a plasma to form a high-density plasma (HDP) insulating layer on the semiconductor substrate.
What does HDP CVD stand for?
In this paper, we present and review recent developments in the high-density plasma chemical vapor deposition (HDP CVD) of silicon-based dielectric films, and of films of recent interest in the development of lower-dielectric-constant alternatives.
What are the commercial high-density plasma CVD systems?
Several commercial high-density plasma CVD systems [32, 35, 36] have been developed in connection with efforts to advance the integrated-circuit technology to the ULSI (ultralarge-scale integration) level. These systems use either ECR or ICP sources for high-density plasma generation.
What is high density plasma CVD of SiO2?
High-Density Plasma CVD of SiO2. Let’s define for convenience High Density Plasma Deposition as occurring when the ion flux to the surface is larger than the net deposition flux. (In this case, every deposited atom gets whacked by an ion at least once on the average.) The ion flux is estimated from the Bohm velocity and the plasma density.
What is hdhigh density plasma chemical vapor deposition?
High Density Plasma Chemical Vapor Deposition (HDPCVD) is a special form of PECVD that employs an Inductively Coupled Plasma (ICP) source to generate a higher plasma density than that of a standard parallel plate PECVD system. Higher plasma density provides several advantages: Deposition at lower temperatures than PECVD—typically 80C-150C
